| PART |
Description |
Maker |
| MT46H64M16LFBF-6 |
Mobile Low-Power DDR SDRAM
|
Micron Technology
|
| HYM7V73A1601BTFG HYM7V73A1601BTFG-75 |
x72 SDRAM Module x72内存模块
16Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 128MB
|
TE Connectivity, Ltd.
|
| HY5Y7A2DLM HY5Y7A2DLMP-HF |
Mobile SDR - 512Mb
|
Hynix Semiconductor
|
| H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
| H55S5122DFR-60M H55S5122DFR-75M H55S5122DFR-A3M H5 |
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| AN10935 |
Using SDR/DDR SDRAM memories
|
NXP
|
| HYB18L128160BC-7.5 HYB18L128160BF-7.5 HYB18L128160 |
DRAMs for Mobile Applications
Very low Power SDRAM optimized for battery-powered, handheld applications
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
Infineon Technologies A...
Infineon Technologies AG
|
| HY5V56BLF-I HY5V56BF-I |
16Mx16|3.3V|8K|H/8/P/S|SDR SDRAM - 256M 16Mx16显示| 3.3 | 8K的| H/8/P/S |特别提款权的SDRAM - 256M
|
Omron Electronics, LLC
|
| HYM71V8M655HCT6 |
8Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 64MB 8Mx64 | 3.3 | 8/P/S | x4 | SDRAM的特别提款权-4MB的内
|
Daesan Electronics, Corp.
|
